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 SBB-1000 50MHz to 1000MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Preliminary
SBB-1000
50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
RFMD's SBB-1000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die can be delivered at the wafer level or picked to gel or waffle paks.
Optimum Technology Matching(R) Applied
Gain and Return Loss (dB)
Features
OIP3=42dBm @ 250MHz P1dB=20dBm @ 500MHz Single Fixed 5V Supply Compact Die Size (0.59mmx0.70mm) Patented Thermal Design and Bias Circuit Low Thermal Resistance
30.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 0.0
Gain and Return Loss versus Frequency VS=5V, IS=90mA
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Applications
GSG Probe Data with Bias Tees ZS=ZL=50 Ohms, T=25C
IRL Gain ORL
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
PA Driver Amp RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation
Frequency (GHz)
Parameter
Frequency of Operation Small Signal Gain Output Power at 1dB Compression
Min.
50
Specification Typ.
Max.
Unit
Condition
1000 MHz 15.5 dB Freq=250MHz, 500MHz, 1000MHz 21.5 dBm Freq=250MHz 20.0 dBm Freq=500MHz 19.0 dBm Freq=1000MHz 42.0 dBm Freq=250MHz Output IP3 40.5 dBm Freq=500MHz 35.5 dBm Freq=1000MHz Input Return Loss >25 dB Freq=500MHz Output Return Loss 18.5 dB Freq=500MHz Current 90 mA Noise Figure 3.4 dB Freq=500MHz Thermal Resistance 48.8 C/W Junction to lead (89 pkg) Test Conditions: Z0 =50, VD =5V, ID =90mA, T=25C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees.
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
EDS-106098 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SBB-1000
Absolute Maximum Ratings Parameter
Total Current (ID) Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power Storage Temperature Range Operating Junction Temp (TJ) ESD Rating - Human Body Model (HBM)
Preliminary
Rating
110 5.5 0.61 -40 to +85 +12(TBR)* -55 to +150 +150 Class 1C
Unit
mA V W C dBm C C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
* TBR=To Be Reviewed Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l
Typical Performance (GSG Probe Data with Bias Tees) VD =5V, ID =90mA, T=25C, Z=50
Parameter
Small Signal Gain Output 3rd Order Intercept Point (see note 1) Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
Note 1: 0dBm/tone, 1MHz spacing.
Units
dB dBm dBm dB dB dB dB
50MHz
15.8
100MHz 250MHz
15.6 15.5 42.0 21.5
500MHz
15.5 40.5 20.0 38.0 18.5 18.0 3.4
750MHz
15.5 38.0 19.5 32.0 15.5 18.0 3.6
1000MHz
15.5 35.5 19.0 29.0 13.5 18.0 3.6
17.0 15.0 17.0 3.4
24.0 19.0 18.0
34.0 21.5 18.5 3.4
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A
Preliminary
Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA
SBB-1000
OIP3 versus Frequency (0dBm/tone, 1MHz spacing)
P1dB versus Frequency
22.0 44.0 42.0 21.0 40.0 38.0 36.0 34.0 32.0 1.0 0.0 0.1
P1dB (dBm)
20.0
19.0
OIP3 (dBm)
18.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-20C 25C 85C
0.9
-20C 25C 85C
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Frequency (GHz)
Frequency (GHz)
Current versus Voltage
120.0 110.0 100.0 5.0 4.5 4.0
Noise Figure versus Frequency
Noise Figure (dB)
-20C 25C 85C
4.8 4.9 5.0 5.1 5.2 5.3
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID (mA)
90.0 80.0 70.0 60.0
25C 85C
VD (V)
Frequency (GHz)
EDS-106098 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SBB-1000
S11 versus Frequency
0.0 -5.0 -10.0
Preliminary
Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA
S21 versus Frequency
18.0
-20C 25C 85C
17.0 16.0
S11 (dB)
-20.0 -25.0 -30.0 -35.0 -40.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
S21 (dB)
-15.0
15.0 14.0 13.0 12.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-20C 25C 85C
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
0.0 -5.0 -10.0 0.0 -5.0 -10.0
S22 versus Frequency
S12 (dB)
-15.0 -20.0 -25.0 -30.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
S22 (dB)
-15.0 -20.0 -25.0 -30.0
-20C 25C 85C
-35.0 -40.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-20C 25C 85C
0.9 1.0
Frequency (GHz)
Frequency (GHz)
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A
Preliminary
Die Dimensions
SBB-1000
Bond Pad Description
Bond Pad
RF IN RF OUT DIE BACKSIDE
Function/Description
This pad is DC coupled and matched to 50. An external DC block is required. This pad is DC coupled and matched to 50. DC bias is applied through this pad. Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
Notes: 1. All dimensions in inches [millimeters]. 2. Die Thickness is 0.004 [0.100]. 3. Typical bond pad is 0.004 (0.100) square. 4. Backside metallization: Gold. 5. Bond pad metallization: Gold. 6. Backside is ground.
Device Assembly
Ordering Information
Part Number
SBB-1000
Description
Bare Die
Devices/Container
EDS-106098 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
SBB-1000
Preliminary
6 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106098 Rev A


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